YJJ S1226-44BQ High UV Sensitivity Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light

Product Description:

S1226-44BQ High UV Sensitivity Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light

Features:

Suitable for precision photometry in ultraviolet to visible wavelengths; Suppress near infrared sensitivity

peculiarity

- High UV sensitivity: QE = 75% (λ = 200 nm)

- Suppress near infrared sensitivity

- Low dark current

- High reliability

Receiving surface 3.6 × 3.6 mm

Encapsulation metal

Package category TO-5

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1000 nm

Maximum sensitivity wavelength (typical value) 720 nm

Photosensitivity (typical value) 0.36A /W

Dark current (Max.) 10 pA

Rise time (typical value) 1 μs

Junction capacitance (typical value) 500 pF

Noise equivalent power (typical value) 3.6×10-15 W/Hz1/2

Measurement conditions Ta = 25°C, typical value, sensitivity: λ = 720 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Specifications:

Ultraviolet Silicon Photodiode

Precision Photometry Silicon Photodiode

High UV Sensitivity Silicon Photodiode

YJJ S1226-44BQ High UV Sensitivity Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light Images